Electrical engineering

Fabrication

Pathology

Nanotechnology

Transistor

Organic chemistry

Dark current

Photoconductivity

Specific detectivity

Engineering

Voltage

Responsivity

Chemistry

Photosensitivity

Materials science

Alternative medicine

Photodetector

Layer (electronics)

Amorphous solid

Photodiode

Optoelectronics

Medicine

Photodetection

Thin-film transistor

Advanced Optical Materials

A three‐terminal thin‐film transistor (TFT) architecture is essential for photodetectors to reach a good balance between high responsivity and fast response speed. Bottom‐gate amorphous Ga 2 O 3 (a‐Ga 2 O 3 ) TFTs are fabricated to boost their UV photodetection properties. During the device fabrication process, a simple chemical‐etching solution with the advantages of easy operation, low cost, and compatibility with traditional lithography process, is developed to selectively etch a‐Ga 2 O 3 films. The a‐Ga 2 O 3 channel etched device on Si manifests an effective suppression of the commonly observed gate leakage current. Meanwhile, a patterned a‐Ga 2 O 3 TFT on quartz shows an excellent n‐type TFT performance with an on/off ratio as high as ≈10 7 . It is further applied as a phototransistor, to diminish the persistent photoconductivity (PPC) effect while keeping a high responsivity ( R ) as well. Under the 254 nm UV illumination, the a‐Ga 2 O 3 phototransistor demonstrates a high light‐to‐dark ratio of 5 × 10 7 , a high responsivity of 5.67 × 10 3 A W −1 , and a high detectivity of 1.87 × 10 15 Jones. Remarkably, the PPC phenomenon in a‐Ga 2 O 3 UV phototransistors is effectively suppressed by applying a positive gate pulse, which greatly shortens the decay time to 5 ms and offers a‐Ga 2 O 3 possible inroads into imaging applications.

Boosted UV Photodetection Performance in Chemically Etched Amorphous Ga<sub>2</sub>O<sub>3</sub> Thin‐Film Transistors

Boosted UV Photodetection Performance in Chemically Etched Amorphous Ga2O3 Thin‐Film Transistors

Boosted UV Photodetection Performance in Chemically Etched Amorphous Ga₂O₃ Thin‐Film Transistors