Original paper
Band Gap Modulation by Two-Dimensional h-BN Nanostructure
Abstract
Two-dimensional hexagonal boron nitride (h-BN) as a graphene-like material was investigated due to its impending applications in electronics. The h-BN band gap Eg as an important factor and its variation between bilayer ZrSe2 sheets were explored under an external electric field. The initially indirect band gap is found to convert to direct band gap by means of density functional theory. Additionally, the band gap is modulated by van der Waals...
Paper Details
Title
Band Gap Modulation by Two-Dimensional h-BN Nanostructure
Published Date
Nov 1, 2019
Journal
Volume
61
Issue
11
Pages
2194 - 2199
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Notes
History