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Electrical and surface properties of SiO2 films modified by ultraviolet irradiation and used as gate dielectrics for pentacene thin-film transistor applications

Volume: 61, Pages: 248 - 254
Published: Sep 10, 2019
Abstract
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Paper Details
Title
Electrical and surface properties of SiO2 films modified by ultraviolet irradiation and used as gate dielectrics for pentacene thin-film transistor applications
Published Date
Sep 10, 2019
Volume
61
Pages
248 - 254
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