Original paper
A 19.9%-efficient ultrathin solar cell based on a 205-nm-thick GaAs absorber and a silver nanostructured back mirror
Abstract
Conventional photovoltaic devices are currently made from relatively thick semiconductor layers, ~150 µm for silicon and 2–4 µm for Cu(In,Ga)(S,Se)2, CdTe or III–V direct bandgap semiconductors. Ultrathin solar cells using 10 times thinner absorbers could lead to considerable savings in material and processing time. Theoretical models suggest that light trapping can compensate for the reduced single-pass absorption, but optical and electrical...
Paper Details
Title
A 19.9%-efficient ultrathin solar cell based on a 205-nm-thick GaAs absorber and a silver nanostructured back mirror
Published Date
Aug 5, 2019
Journal
Volume
4
Issue
9
Pages
761 - 767