Quantum mechanics

Magnetic field

Voltage

Engineering

Pure mathematics

Field strength

Materials science

Chromatography

Layer (electronics)

Field (mathematics)

Atomic physics

Dielectric strength

Saturation (graph theory)

Breakdown voltage

Ohmic contact

Transistor

Physics

Saturation current

Dielectric

Mathematics

Doping

Composite material

Analytical Chemistry (journal)

Combinatorics

Chemistry

Optoelectronics

Electrical engineering

MOSFET

Applied Physics Express

A composite field-plated Ga2O3 MOSFET with highly doped ohmic-capping layer is fabricated. An output current of 20 mA mm−1 and on-resistance of 520 mΩ · cm2 shows big improvement upon the previous experiment on similar field plated devices. The breakdown voltage is measured to be 1975 V on an Lgd = 25 μm device. At elevated temperatures, the breakdown voltage decreases to <1 kV at 130 °C, while the on-resistance and saturation current are almost unchanged. The breakdown may be limited by the dielectric liquid strength. The on-resistance is limited by high interface state density that is attributed to the thermal process during the field oxide deposition.

A field-plated Ga2O3 MOSFET with near 2-kV breakdown voltage and 520 mΩ · cm2 on-resistance