Physics

Quantum dot

Nanotechnology

Organic chemistry

Stoichiometry

Physical chemistry

Chemistry

Materials science

Layer (electronics)

Photoluminescence

Electroluminescence

Optoelectronics

Journal of the American Chemical Society

We introduce stoichiometry control within both core and shell regions of InP/ZnSe/ZnS core/shell/shell quantum dots (QDs) to advance their properties drastically, approaching those of state-of-the-art CdSe-based QDs. The resulting QDs possess near-unity photoluminescence quantum yield, monoexponential decay dynamics, narrow line width, and nonblinking at a single-dot level. Quantum-dot light-emitting diodes (QLEDs) with the InP/ZnSe/ZnS core/shell/shell QDs as emitters exhibit a peak external quantum efficiency of 12.2% and a maximum brightness of >10 000 cd m–2, greatly exceeding those of the Cd/Pb-free QLEDs reported in literature. These results pave the way toward Cd/Pb-free QDs as outstanding optical and optoelectronic materials.

Stoichiometry-Controlled InP-Based Quantum Dots: Synthesis, Photoluminescence, and Electroluminescence