Electrical engineering

Geology

Nanotechnology

Transistor

MOSFET

Breakdown voltage

Epitaxy

Oceanography

Engineering

Voltage

Materials science

Substrate (aquarium)

Layer (electronics)

Molecular beam epitaxy

Optoelectronics

Doping

Power MOSFET

ECS Journal of Solid State Science and Technology

We report on demonstrating high performance lateral β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) with source-connected field plate (FP) on a thin (150 nm) and highly Si-doped (n = 1.5 × 1018 cm−3) β-Ga2O3 epitaxial channel layer grown by ozone molecular beam epitaxy (MBE) on Fe-doped semi-insulating (010) substrate. For a MOSFET with a gate-drain spacing (Lgd) of 25 μm, the three terminal off-state breakdown voltage (VBR) tested in Fluorinert ambient reaches 2321 V. To the best of our knowledge, this is the first report of lateral β-Ga2O3 MOSFET with high VBR of more than 2 kV and the highest VBR attained among all the Ga2O3 MOSFETs. The breakdown voltages with different Lgd from 5–25 μm ranged from 518–2321V, with a linear trend of increasing breakdown voltage for larger spacing lateral MOSFETs. Combining with high electrical performances and excellent material properties, source-connected FP lateral β-Ga2O3 MOSFET implies its great potential for next generation high-voltage and high-power switching devices applications above 2 kV.

Editors' Choice—2.32 kV Breakdown Voltage Lateral β-Ga<sub>2</sub>O<sub>3</sub> MOSFETs with Source-Connected Field Plate

Editors' Choice—2.32 kV Breakdown Voltage Lateral β-Ga2O3 MOSFETs with Source-Connected Field Plate

Editors' Choice—2.32 kV Breakdown Voltage Lateral β-Ga₂O₃ MOSFETs with Source-Connected Field Plate