Active‐Matrix GaN µ‐LED Display Using Oxide Thin‐Film Transistor Backplane and Flip Chip LED Bonding

A 2 in. active‐matrix light‐emitting diode (AMLED) display by integration of the micro‐LED onto the oxide thin‐film transistor (TFT) backplane using flip chip bonding is reported. A blue‐emitting micro‐LED (µ‐LED) with a size of 90 × 50 µm 2 is fabricated on the GaN epi grown on a sapphire substrate. The amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) TFT on glass exhibiting the mobility of 18.4 cm 2 V −1 s −1 , turn‐on voltage ( V ON ) of 0.2 V,...