Annealing (glass)

Quantum mechanics

Acceptor

Metallurgy

Materials science

Chromatography

Dopant Activation

Dopant

Thermal diffusivity

Silicon

Inorganic chemistry

Physics

Organic chemistry

Doping

Condensed matter physics

Analytical Chemistry (journal)

Chemistry

Impurity

Ion implantation

Optoelectronics

Applied Physics Letters

Deep acceptor doping of β-Ga2O3 with Mg and N was demonstrated by implantation of the impurity ions into n-type bulk substrates. Systematic physical and electrical characterizations were performed to demonstrate recovery of the implantation-damaged crystals and electrical activation of the dopant atoms by thermal annealing at 1000–1200 °C in an N2 atmosphere. N was found to exhibit much lower thermal diffusivity than Mg, thus enabling the use of higher annealing temperatures to maximize N activation efficiency without significantly altering the impurity profile. Consequently, an n-Ga2O3/Ga2O3:N/n-Ga2O3 structure was capable of sustaining a much larger voltage across its end terminals than its Mg-doped counterpart. The development of an ion implantation technology for acceptor doping of β-Ga2O3 creates unique opportunities for designing and engineering a variety of high-voltage β-Ga2O3 devices.

Acceptor doping of <i>β</i>-Ga2O3 by Mg and N ion implantations

Acceptor doping of β-Ga2O3 by Mg and N ion implantations