Electrical engineering

Nanotechnology

Reverse bias

Analytical Chemistry (journal)

Breakdown voltage

Figure of merit

Epitaxy

Engineering

Schottky barrier

Voltage

Schottky diode

Chemistry

Materials science

Layer (electronics)

Diode

Chromatography

Optoelectronics

Doping

ECS Journal of Solid State Science and Technology

We report field-plated Schottky rectifiers of various dimensions (circular geometry with diameter 50–200 μm and square diodes with areas 4 × 10−3–10−2 cm2) fabricated on thick (20μm), lightly doped (n = 2.10 × 1015 cm −3) β-Ga2O3 epitaxial layers grown by Hydride Vapor Phase Epitaxy on conducting (n = 3.6 × 1018 cm−3) substrates grown by Edge-Defined, Film-Fed growth. The maximum reverse breakdown voltage (VB) was 2300V for a 150 μm diameter device (area = 1.77 × 10−4 cm−2), corresponding to a breakdown field of 1.15 MV.cm−1. The reverse current was only 15.6 μA at this voltage. This breakdown voltage is highest reported for Ga2O3 rectifiers. The on-state resistance (RON) for these devices was 0.25 Ω.cm2, leading to a figure of merit (VB2/RON) of 21.2 MW.cm−2. The Schottky barrier height of the Ni was 1.03 eV, with an ideality factor of 1.1 and a Richardson's constant of 43.35 A.cm−2.K−2 obtained from the temperature dependence of the forward current density. The breakdown voltages for the different size devices ranged from 1400–2300V, with a general, but not linear trend of decreasing breakdown voltage for larger area rectifiers. The reverse recovery time was ∼22 ns for switching from +2 V to −2 V.

2300V Reverse Breakdown Voltage Ga<sub>2</sub>O<sub>3</sub>Schottky Rectifiers

2300V Reverse Breakdown Voltage Ga2O3Schottky Rectifiers

2300V Reverse Breakdown Voltage Ga₂O₃Schottky Rectifiers