In situ weaving an all‐carbon graphdiyne coat on a silicon anode is scalably realized under ultralow temperature (25 °C). This economical strategy not only constructs 3D all‐carbon mechanical and conductive networks with reasonable voids for the silicon anode at one time but also simultaneously forms a robust interfacial contact among the electrode components. The intractable problems of the disintegrations in the mechanical and conductive networks and the interfacial contact caused by repeated volume variations during cycling are effectively restrained. The as‐prepared electrode demostrates the advantages of silicon regarding capacity (4122 mA h g −1 at 0.2 A g −1 ) with robust capacity retention (1503 mA h g −1 ) after 1450 cycles at 2 A g −1 , and a commercial‐level areal capacity up to 4.72 mA h cm −2 can be readily approached. Furthermore, this method shows great promises in solving the key problems in other high‐energy‐density anodes.