Original paper
Perspective: The future of quantum dot photonic integrated circuits
Abstract
Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and scalability advantages over heterogeneous integration. The challenge is that epitaxial growth introduces high densities of crystalline defects that limit device performance and lifetime. Quantum dot lasers, amplifiers, modulators, and photodetectors epitaxially grown on Si are showing promise for achieving low-cost, scalable integration with silicon...
Paper Details
Title
Perspective: The future of quantum dot photonic integrated circuits
Published Date
Mar 1, 2018
Journal
Volume
3
Issue
3
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Notes
History