Two-dimensional transition metal dichalcogenides: interface and defect engineering

Volume: 47, Issue: 9, Pages: 3100 - 3128
Published: Jan 1, 2018
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been considered as promising candidates for next generation nanoelectronics. Because of their atomically-thin structure and high surface to volume ratio, the interfaces involved in TMDC-based devices play a predominant role in determining the device performance, such as charge injection/collection at the metal/TMDC interface, and charge carrier trapping at the dielectric/TMDC...
Paper Details
Title
Two-dimensional transition metal dichalcogenides: interface and defect engineering
Published Date
Jan 1, 2018
Volume
47
Issue
9
Pages
3100 - 3128
Citation AnalysisPro
  • Scinapse’s Top 10 Citation Journals & Affiliations graph reveals the quality and authenticity of citations received by a paper.
  • Discover whether citations have been inflated due to self-citations, or if citations include institutional bias.