Bipolar resistive switching and nonvolatile memory effect in poly (3-hexylthiophene) –carbon nanotube composite films

The resistive switching behavior and nonvolatile memory effects have been investigated in poly (3-hexylthiophene) (P3HT) and carbon nanotubes (CNT) composite thin films. The memory devices with FTO/P3HT-CNT/Al structure were fabricated by varying the CNT content in the composite. The memory device with 4% CNT in P3HT exhibited a typical bipolar resistive switching with set voltage of ∼1.8 V and a high ON/OFF ratio of >102. The nonvolatile...