Enhanced Strength Through Nanotwinning in the Thermoelectric Semiconductor InSb

Volume: 119, Issue: 21
Published: Nov 21, 2017
Abstract
The conversion efficiency (zT) of thermoelectric (TE) materials has been enhanced over the last two decades, but their engineering applications are hindered by the poor mechanical properties, especially the low strength at working conditions. Here we used density functional theory (DFT) to show a strength enhancement in the TE semiconductor InSb arising from the twin boundaries (TBs). This strengthening effect leads to an 11% enhancement of the...
Paper Details
Title
Enhanced Strength Through Nanotwinning in the Thermoelectric Semiconductor InSb
Published Date
Nov 21, 2017
Volume
119
Issue
21
Citation AnalysisPro
  • Scinapse’s Top 10 Citation Journals & Affiliations graph reveals the quality and authenticity of citations received by a paper.
  • Discover whether citations have been inflated due to self-citations, or if citations include institutional bias.