Original paper
Ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial Cu foil
Abstract
A foundation of the modern technology that uses single-crystal silicon has been the growth of high-quality single-crystal Si ingots with diameters up to 12 inches or larger. For many applications of graphene, large-area high-quality (ideally of single-crystal) material will be enabling. Since the first growth on copper foil a decade ago, inch-sized single-crystal graphene has been achieved. We present here the growth, in 20min, of a graphene...
Paper Details
Title
Ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial Cu foil
Published Date
Aug 1, 2017
Journal
Volume
62
Issue
15
Pages
1074 - 1080
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Notes
History