Growth Dynamics of Single-Layer Graphene on Epitaxial Cu Surfaces

Published on Jul 23, 2015in Chemistry of Materials9.567
· DOI :10.1021/ACS.CHEMMATER.5B01871
Hiroki Ago47
Estimated H-index: 47
,
Yujiro Ohta2
Estimated H-index: 2
(Kyushu University)
+ 7 AuthorsSeigi Mizuno21
Estimated H-index: 21
Sources
Abstract
The growth of single-layer graphene on Cu metal by chemical vapor deposition (CVD) is a versatile method for synthesizing high-quality, large-area graphene. It is known that high CVD temperatures, close to the Cu melting temperature (1083 °C), are effective for the growth of large graphene domains, but the growth dynamics of graphene over the high-temperature Cu surface is not clearly understood. We investigated the surface dynamics of the single-layer graphene growth by using heteroepitaxial Cu(111) and Cu(100) films. At relatively lower temperatures, 900–1030 °C, the as-grown graphene showed the identical orientation with the underlying Cu(111) lattice. However, when the graphene was grown above 1040 °C, a new stable configuration of graphene with 3.4° rotation became dominant. This slight rotation is interpreted by the enhanced graphene–Cu interaction due to the formation of long-range ordered structure. Further increase of the CVD temperature resulted in graphene which is rotated with wide angle distr...
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