Growth Dynamics of Single-Layer Graphene on Epitaxial Cu Surfaces

Volume: 27, Issue: 15, Pages: 5377 - 5385
Published: Jul 23, 2015
Abstract
The growth of single-layer graphene on Cu metal by chemical vapor deposition (CVD) is a versatile method for synthesizing high-quality, large-area graphene. It is known that high CVD temperatures, close to the Cu melting temperature (1083 °C), are effective for the growth of large graphene domains, but the growth dynamics of graphene over the high-temperature Cu surface is not clearly understood. We investigated the surface dynamics of the...
Paper Details
Title
Growth Dynamics of Single-Layer Graphene on Epitaxial Cu Surfaces
Published Date
Jul 23, 2015
Volume
27
Issue
15
Pages
5377 - 5385
Citation AnalysisPro
  • Scinapse’s Top 10 Citation Journals & Affiliations graph reveals the quality and authenticity of citations received by a paper.
  • Discover whether citations have been inflated due to self-citations, or if citations include institutional bias.