Voltage

Engineering

Philosophy

Materials science

Layer (electronics)

Modulation (music)

Transistor

Nanotechnology

Aesthetics

Doping

Field-effect transistor

Optoelectronics

Electrical engineering

Advanced Functional Materials

Control of the carrier type in 2D materials is critical for realizing complementary logic computation. Carrier type control in WSe2 field-effect transistors (FETs) is presented via thickness engineering and solid-state oxide doping, which are compatible with state-of-the-art integrated circuit (IC) processing. It is found that the carrier type of WSe2 FETs evolves with its thickness, namely, p-type ( 15 nm). This layer-dependent carrier type can be understood as a result of drastic change of the band edge of WSe2 as a function of the thickness and their band offsets to the metal contacts. The strong carrier type tuning by solid-state oxide doping is also demonstrated, in which ambipolar characteristics of WSe2 FETs are converted into pure p-type, and the field-effect hole mobility is enhanced by two orders of magnitude. The studies not only provide IC-compatible processing method to control the carrier type in 2D semiconductor, but also enable to build functional devices, such as, a tunable diode formed with an asymmetrical-thick WSe2 flake for fast photodetectors.

Carrier Type Control of WSe<sub>2</sub>Field-Effect Transistors by Thickness Modulation and MoO<sub>3</sub>Layer Doping

Carrier Type Control of WSe2Field-Effect Transistors by Thickness Modulation and MoO3Layer Doping

Carrier Type Control of WSe₂Field-Effect Transistors by Thickness Modulation and MoO₃Layer Doping