Carrier Type Control of WSe₂ Field‐Effect Transistors by Thickness Modulation and MoO₃ Layer Doping

Control of the carrier type in 2D materials is critical for realizing complementary logic computation. Carrier type control in WSe 2 field‐effect transistors (FETs) is presented via thickness engineering and solid‐state oxide doping, which are compatible with state‐of‐the‐art integrated circuit (IC) processing. It is found that the carrier type of WSe 2 FETs evolves with its thickness, namely, p‐type (<4 nm), ambipolar (≈6 nm), and n‐type...