Physics

Nanotechnology

Quantum well

Fiber amplifier

Gallium arsenide

Laser

Optics

Semiconductor laser theory

Fiber laser

Light-emitting diode

Active layer

Materials science

Layer (electronics)

Diode

Optoelectronics

Doping

Wavelength

Thin-film transistor

High-power semiconductor laser diodes (LDs) emitting at 1.48-pm wavelength have become increasingly important as pumping light sources for Er+3-doped fiber amplifiers.1 Recently, introducing strained-layer quantum wells (QWs) as active layers in the LDs has been a most promising approach to enhance output power of long-wavelength LDs.2–4 In this paper, we report the optimization of the amount of strain in QWs with respect to the light output power of 1.48-μm strained-layer GaInAsP/GaInAsP MQW LDs.

Ultrahigh output power of 1.48-pm GaInAsP/GaInAsP strained-layer MQW laser diodes