Quantum mechanics

Acceptor

Ecology

Biology

Materials science

Chromatography

Ab initio quantum chemistry methods

Nuclear physics

Trap (plumbing)

Dopant

Atomic physics

Ab initio

Molecule

Silicon

Trapping

Thermodynamics

Hydrogen

Physics

Organic chemistry

Diffusion

Molecular physics

Doping

Condensed matter physics

Analytical Chemistry (journal)

Chemistry

Meteorology

Optoelectronics

Physical review. B, Condensed matter

Hydrogen depth profiles in highly doped p-type silicon are obtained from the analysis of infrared reflectance spectra of H-passivated samples. From these profiles, H-diffusion coefficients are calculated for different temperatures and dopant concentrations. The results are explained with the assumption that hydrogen diffusion is limited by trapping at the acceptor sites. A binding energy of 0.6 eV is found for B-H complexes, in agreement with previous ab initio calculations.

Trap-limited hydrogen diffusion in doped silicon