Quantum mechanics

Avalanche diode

Epitaxy

Detector

Ultraviolet

Voltage

Materials science

Layer (electronics)

Geiger counter

Silicon

Breakdown voltage

Molecular beam epitaxy

Avalanche photodiode

Physics

Quantum efficiency

Nanotechnology

Optics

Photodiode

Wafer

Optoelectronics

Passivation

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

We have demonstrated a wafer-scale back-illumination process for silicon Geiger-mode avalanche photodiode arrays using Molecular Beam Epitaxy (MBE) for backside passivation. Critical to this fabrication process is support of the thin (< 10 μm) detector during the MBE growth by oxide-bonding to a full-thickness silicon wafer. This back-illumination process makes it possible to build low-dark-count-rate single-photon detectors with high quantum efficiency extending to deep ultraviolet wavelengths. This paper reviews our process for fabricating MBE back-illuminated silicon Geigermode avalanche photodiode arrays and presents characterization of initial test devices.

MBE back-illuminated silicon Geiger-mode avalanche photodiodes for enhanced ultraviolet response