Photoelectrochemical properties of ZnO–SnO2 films prepared by sol–gel method

Zn2SnO4 films were prepared by dip-coating from the solutions consisting of Zn(CH3COO)2·2H2O, SnCl4·5H2O, H2O, CH3COCH2COCH3 and CH3OC2H4OH, and the photoanodic properties were compared to those of the ZnO and SnO2 films prepared via the same synthetic route. Here, the photoanodic properties were studied in a three-electrode cell with an aqueous buffer solution of pH = 7 as the supporting electrolyte. The Zn2SnO4, ZnO and SnO2 films exhibited...