Macroeconomics

Voltage

Engineering

Fabrication

Materials science

Planar

Computer graphics (images)

Schottky barrier

Leakage (economics)

Economics

Computer science

Nano-

Gate oxide

Diode

Alternative medicine

Transistor

Physics

Nanotechnology

Drain-induced barrier lowering

Short-channel effect

Composite material

Field-effect transistor

Schottky diode

Medicine

Nanoscopic scale

CMOS

Optoelectronics

Electrical engineering

Pathology

MOSFET

Engineering physics

Semiconductor Science and Technology

An n-channel planar asymmetric Schottky barrier source/drain MOSFET (ASB), in which the source-side Schottky barrier is higher (0.9 eV, for PtSi) and the drain-side one is lower (0.2 eV, for ErSi), has been investigated. A fabrication proposal for nano-scale ASB devices has been put forward based on the spacer technique. This method is compatible with conventional CMOS processing. The characteristics of a 28 nm gate-length ASB device have been simulated with a numerical simulator, and the data are compared with the simulated results of corresponding conventional Schottky barrier MOSFETs. Comparison results have demonstrated that the ASB structure can efficiently suppress the leakage current and the Ion/Ioff ratio can be much improved.

A planar asymmetric Schottky barrier source/drain structure for nano-scale MOSFETs