Annealing (glass)

Electrical resistivity and conductivity

Sediment

Engineering

Metallurgy

Materials science

Chromatography

Deposition (geology)

Dopant

Phosphorus

Pulsed laser deposition

Inorganic chemistry

Chemical engineering

Geology

Zinc

Paleontology

Sapphire

Laser

Physics

Nanotechnology

Electron mobility

Optics

Doping

X-ray photoelectron spectroscopy

Thin film

Analytical Chemistry (journal)

Chemistry

Optoelectronics

Electrical engineering

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Electrical and chemical bonding properties of P-doped ZnO thin films grown by pulsed laser deposition on sapphire substrates were systematically characterized utilizing the Hall effect and x-ray photoelectron spectroscopy (XPS) measurements. Oxygen growth pressure and postannealing processing play a great role in the properties of these films. Increasing oxygen growth pressure from 5 to 20 Pa enhanced the resistivity of P-doped ZnO films by three orders of magnitude. P-doped ZnO films grown at 700 °C under 20 Pa O2 exhibited p-type conductivity with hole concentration of 5×1017 cm−3 and hole mobility of 0.3 cm2/V s. Rapid thermal annealing processing decreased the electron density in the P-doped ZnO films. XPS binding energies of P 2s and 2p peaks showed formation of P–O bonds which increased with oxygen pressure in the films. This indicates formation of defect complexes of P dopants occupying zinc sites PZn and zinc vacancies VZn in the P-doped ZnO films.

Properties of phosphorus-doped zinc oxide films grown by pulsed laser deposition