Quantum mechanics

Engineering

Silicon on insulator

Materials science

Trap (plumbing)

Computer science

Silicon

Physics

Image (mathematics)

Doping

Electronic engineering

Artificial intelligence

Sensitivity (control systems)

Dispersion (optics)

Meteorology

Noise (video)

Optoelectronics

Electrical engineering

Microelectronics Reliability

In this paper we investigate the sensitivity of RTN noise spectra to statistical variability alone and in combination with variability in the traps properties, such as trap level and trap activation energy. By means of 3D statistical simulation, we demonstrate the latter to be mostly responsible for noise density spectra dispersion, due to its large impact on the RTN characteristic time. As a result FinFETs devices are shown to be slightly more sensitive to RTN than FDSOI devices. In comparison bulk MOSFETs are strongly disadvantaged by the statistical variability associated with high channel doping.

RTN distribution comparison for bulk, FDSOI and FinFETs devices