Doukyun Kim
Pusan National University
SemiconductorEpitaxyQuantum dotFinite element methodComposite materialExcitonIntergranular corrosionMetallurgyDopantMaterials scienceDeformation (meteorology)Condensed matter physicsExtrusionGrain boundaryOptoelectronicsArtificial neural networkDopingStructural engineeringMechanical engineeringPlasmaQuantumProcess (computing)
16Publications
6H-index
203Citations
Publications 16
Newest
#1Jiwoong Kim (PNU: Pusan National University)H-Index: 11
#2Hong-Jun Park (PNU: Pusan National University)H-Index: 1
Last. Sungkyun Park (PNU: Pusan National University)H-Index: 19
view all 15 authors...
Abstract Bandgap engineering in semiconductors is a long-term subject in many interests. Doping Bi modifies the wide-bandgap semiconductor In2O3 by generating an in-gap state. The reflectance spectra show that an optical transition occurs at 1.2 eV inside the bandgap of In2O3 as a substitution of Bi atoms, which is in good agreement with the previously reported density functional theory (DFT) calculation by Sabino et al., Phys. Rev. Mater. 3 (2019) 034605. The detailed analyses illustrate that t...
1 CitationsSource
#2Doukyun Kim (PNU: Pusan National University)H-Index: 6
#3Kyu-Tae Lee (KIST: Korea Institute of Science and Technology)H-Index: 11
Last. Il Ki Han (KIST: Korea Institute of Science and Technology)H-Index: 19
view all 7 authors...
We investigate the quantum confinement effects on excitons in several types of strain-free GaAs/Al 0 . 3 Ga 0 . 7 As droplet epitaxy (DE) quantum dots (QDs). By performing comparative analyses of energy-dispersive X-ray spectroscopy with the aid of a three-dimensional (3D) envelope-function model, we elucidate the individual quantum confinement characteristics of the QD band structures with respect to their composition profiles and the asymmetries of their geometrical shapes. By precisely contro...
4 CitationsSource
#1Doukyun KimH-Index: 6
#2Chul Hong ParkH-Index: 25
Source
#1Doukyun KimH-Index: 6
#2Chul Hong ParkH-Index: 25
#2Doukyun Kim (PNU: Pusan National University)H-Index: 6
#3Il Ki Han (KIST: Korea Institute of Science and Technology)H-Index: 19
Last. Jin Dong Song (KIST: Korea Institute of Science and Technology)H-Index: 23
view all 4 authors...
Herein, we present the calculated strain-induced control of single GaAs/AlGaAs quantum dots (QDs) integrated into semiconductor micropillar cavities. We show precise energy control of individual single GaAs QD excitons under multi-modal stress fields of tailored micropillar optomechanical resonators. Further, using a three-dimensional envelope-function model, we evaluated the quantum mechanical correction in the QD band structures depending on their geometrical shape asymmetries and, more intere...
1 CitationsSource
#1Seung Hun Lee (UMD: University of Maryland, College Park)H-Index: 21
#2Jihun Park (PNU: Pusan National University)H-Index: 17
Last. Se-Young Jeong (PNU: Pusan National University)H-Index: 28
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Magnetic oxide semiconductors with wide band gaps have promising spintronic applications, especially in the case of magneto-optic devices. Co-doped ZnO (ZnCoO) has been considered for these applications, but the origin of its ferromagnetism has been controversial for several decades and no substantial progress for a practical application has been made to date. In this paper, we present direct evidence of hydrogen-mediated ferromagnetism and spin polarization in the conduction band of ZnCoO. Elec...
4 CitationsSource
#1Doukyun Kim (PNU: Pusan National University)H-Index: 6
#2Maengsuk Kim (PNU: Pusan National University)H-Index: 2
Last. Chul Hong Park (PNU: Pusan National University)H-Index: 25
view all 3 authors...
Through first-principles electronic-structure calculations, we suggest that because the transitionmetal (TM)-d levels are located deep within the conduction band, TM (M = Hf, Zr, or Ti)-doped amorphous In2O3 (a-In2O3) can provide shallow donors, even though the effective mass of the a-In2O3 is slightly increased. We examined the microscopic structure of the doped oxides. The effective coordination number of In is little changed by the doping. The atomic strtuctures of Sn, Hf, and Zr are similar,...
Source
#1I.-K. JeongH-Index: 17
#2Chansu Park (PNU: Pusan National University)H-Index: 7
Last. Doukyun Kim (PNU: Pusan National University)H-Index: 6
view all 5 authors...
39 CitationsSource
#1Chung-Yeol Lee (PNU: Pusan National University)H-Index: 8
#2Sung Kwang Lee (PNU: Pusan National University)H-Index: 2
Last. Byeong-Woo Kim (PNU: Pusan National University)H-Index: 20
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Abstract In this study, cold rolled steel sheet for automotive was pretreated by the Ar/O 2 atmospheric pressure plasma at room temperature to improve the adhesive bonding properties. Through the analysis of contact angle and calculation of work of adhesion, the change of surface properties related to the plasma power, treatment time, and flow rate of O 2 gas were investigated before and after plasma treatment. Contact angle was degreased and work of adhesion was increased after plasma treatment...
33 CitationsSource
#1Doukyun KimH-Index: 6
#2Suntak ParkH-Index: 20
Last. Yoon KimH-Index: 16
view all 11 authors...
4 CitationsSource