growth characterization

czochralski method

chemical transport

grown czochralski

growth single

floating zone

czochralski technique

bi sr

vertical gradient freeze

czochralski growth

Journal of alloys and compounds

A novel casting method was developed to grow β-Ga 2 O 3 bulk single crystals without using a seed crystal. After separation from the crucible and processing, 2-inch diameter single crystal β-Ga 2 O 3 ingots with (100) plane could be obtained and no large imperfection were observed. The 10×10 mm 2 β-Ga 2 O 3 single crystals samples with different crystal orientation have good crystal quality with full width at half maximum less than 50 arcsec, surface roughness less than 0.5 nm and defect density at the magnitude of 10 4 cm -2 . On the basis of the experimental phenomena, a numerical simulation model was proposed to explain the crystal growth process in the casting method. • β-Ga 2 O 3 bulk single crystals were grown by the innovative casting method. • Seed crystal was not used to grow β-Ga 2 O 3 crystal. • The defect density of the samples is similar to that of the EFG-grown crystal. • Numerical model was proposed to explain crystal growth process.

β-Ga2O3 bulk single crystals grown by a casting method