infrared photodetectors

Journal of alloys and compounds

Wireless communication under harsh environment using ultraviolet radiation remains a vital field of research. We have reported the novel GaN pyramids of Djoser ultraviolet photodetector operable at high-temperature conditions. The GaN-pyramids of Djoser ultraviolet photodetector display extremely high performance, detect weak optical signals and display self-powered behavior even under challenging conditions. GaN-pyramids of Djoser was grown via modulating flux ratio (Ga/N) in molecular beam epitaxy. Two-terminal asymmetric Pt electrodes metal semiconductor metal-ultraviolet photodetector were fabricated for better thermal stability and low dark current. The device exhibits high responsivity of 11.1×10 3 mAW -1 at RT and 5.6×10 3 mAW -1 at 250 °C with a fast response time of ~ 200 µs in self-power mode. In photoconductive mode, the device demonstrates very high responsivity ~ 2.5×10 7 mAW -1 , high detectivity (10 12 jones) at a weak optical signal , while the device shows very high responsivity ~1×10 7 mAW -1 at 250 o C. The extraordinary performance of the device is attributed to its unique Djoser-pyramidal structure with decreased surface stress and dislocations. The self-powered device with significantly high responsivity and capability to detect weak optical signals demonstrates the feasibility of a highly efficient photoreceiver design of GaN- pyramids of Djoser for ultraviolet communication, which can work under harsh environmental conditions. • Epitaxy of unique GaN pyramids of Djoser (GaN-DPs) structure by PAMBE. • Self-powered UVPD with high responsivity of 1.11×10 4 mAW -1 at RT 5.6×10 3 mAW -1 at 250 °C. • GaN-DPs UVPD exhibits very high responsivity ~ 2.5×10 7 mAW -1 in photovoltaic mode. • UVPD with high detectivity and capability to detect weak optical signals ~ 12 femto watts.

GaN-Djoser Pyramidal Self Powered UV Photodetector for Optical Signal Detection in Rugged Environments