Quantum mechanics

Voltage

Engineering

Photodetector

Photocurrent

Materials science

Photodetection

Power (physics)

Molecule

Silicon

Semiconductor

Diode

Photonics

Nanowire

Physics

Nanotechnology

Rectification

Photodiode

van der Waals force

Miniaturization

Heterojunction

Nanoscopic scale

Photovoltaics

Optoelectronics

Dangling bond

Photovoltaic system

Electrical engineering

Advanced Functional Materials

Continuous miniaturization of semiconductor devices is the key to boosting modern electronics development. However, this downscaling strategy has been rarely utilized in photoelectronics and photovoltaics. Here, in this work, a full‐van der Waals (vdWs) 1D p‐Te/2D n‐Bi 2 O 2 Se heterodiode with a rationally designed nanoscale ultra‐photosensitive channel is reported. Enabled by the dangling bond‐free mixed‐dimensional vdWs integration, the Te/Bi 2 O 2 Se type‐II diodes show a high rectification ratio of 3.6 × 10 4 . Operating with 100 mV reverse bias or in a self‐power mode, the photodiodes demonstrate excellent photodetection performances, including high responsivities of 130 A W −1 (100 mV bias) and 768.8 mA W −1 (self‐power mode), surpassing most of the reports of other heterostructures. More importantly, a superlinear photoelectric conversion phenomenon is uncovered in these nanoscale full‐vdWs photodiodes, in which a model based on the in‐gap trap‐assisted recombination is proposed for this superlinearity. All these results provide valuable insights in light–matter interactions for further performance enhancement of photoelectronic devices.

Highly Efficient Full van der Waals 1D p‐Te/2D n‐Bi<sub>2</sub>O<sub>2</sub>Se Heterodiodes with Nanoscale Ultra‐Photosensitive Channels

Highly Efficient Full van der Waals 1D p‐Te/2D n‐Bi2O2Se Heterodiodes with Nanoscale Ultra‐Photosensitive Channels

Highly Efficient Full van der Waals 1D p‐Te/2D n‐Bi₂O₂Se Heterodiodes with Nanoscale Ultra‐Photosensitive Channels