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Original paper

A 16Gb 9.5Gb/S/pin LPDDR5X SDRAM With Low-Power Schemes Exploiting Dynamic Voltage-Frequency Scaling and Offset-Calibrated Readout Sense Amplifiers in a Fourth Generation 10nm DRAM Process

Pages: 448 - 450
Published: Feb 20, 2022
Abstract
Mobile systems for 5G communications and emerging technologies, such as advanced driver assistance system (ADAS), augmented reality (AR), and artificial intelligence (AI), demand high-density, high-speed, and low-power DRAM.LPDDR5 has played an important role in such systems, by offering continuous improvements in memory density (8, 12, and 16Gb) and speed (up to 8.5Gb/s) [1, 2, 3].LPDDR5X has new high-speed enabling features: per-pin DFE...
Paper Details
Title
A 16Gb 9.5Gb/S/pin LPDDR5X SDRAM With Low-Power Schemes Exploiting Dynamic Voltage-Frequency Scaling and Offset-Calibrated Readout Sense Amplifiers in a Fourth Generation 10nm DRAM Process
Published Date
Feb 20, 2022
Pages
448 - 450
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