Gene

Engineering

Chemical physics

Ecology

Biology

Materials science

Layer (electronics)

Biochemistry

Perovskite (structure)

Silicon

Photoluminescence

Semiconductor

Chemical engineering

Thermodynamics

Laser

Physics

Nanotechnology

Perovskite solar cell

Optics

Recombination

X-ray photoelectron spectroscopy

Work (physics)

Solar cell

Monolayer

Chemistry

Optoelectronics

Photovoltaic system

Spontaneous emission

Advanced Energy Materials

Perovskite semiconductors are an attractive option to overcome the limitations of established silicon based photovoltaic (PV) technologies due to their exceptional opto‐electronic properties and their successful integration into multijunction cells. However, the performance of single‐ and multijunction cells is largely limited by significant nonradiative recombination at the perovskite/organic electron transport layer junctions. In this work, the cause of interfacial recombination at the perovskite/C 60 interface is revealed via a combination of photoluminescence, photoelectron spectroscopy, and first‐principle numerical simulations. It is found that the most significant contribution to the total C 60 ‐induced recombination loss occurs within the first monolayer of C 60 , rather than in the bulk of C 60 or at the perovskite surface. The experiments show that the C 60 molecules act as deep trap states when in direct contact with the perovskite. It is further demonstrated that by reducing the surface coverage of C 60 , the radiative efficiency of the bare perovskite layer can be retained. The findings of this work pave the way toward overcoming one of the most critical remaining performance losses in perovskite solar cells.

Understanding Performance Limiting Interfacial Recombination in <i>pin</i> Perovskite Solar Cells

Understanding Performance Limiting Interfacial Recombination in pin Perovskite Solar Cells