Ring oscillator

Electrical engineering

Physics

Logic gate

Nanotechnology

Spice

CMOS

Electronic circuit

Macroeconomics

Engineering

Economics

Power (physics)

Circuit design

Materials science

Leakage (economics)

Electronic engineering

Circuit reliability

Computer science

Integrated circuit

Quantum mechanics

Reliability (semiconductor)

Optoelectronics

Nanosheet

IEEE Transactions on Electron Devices

Self-heating effects (SHEs) of multi-nanosheet FET (mNS-FET) at the 3-nm technology node were analyzed at the device and circuit level considering the introduction of punchthrough-stopper (PTS) doping and bottom oxide (BO), which are substrate processes to reduce leakage current. Changes in the heat path according to the back-end-of-line (BEOL) configuration and package type were also considered. After optimizing the PTS doping and BO process through six case analyses using three-dimensional (3-D) TCAD simulations, SHE characteristics were investigated. As a result, the channel temperature risen due to SHE was larger when BO was applied than when BO was not applied, and that the face-down package was more effective in heat dissipation than the face-up package. Next, the SHE behavior during dynamic operation of logic and analog circuits was analyzed through SPICE modeling, and the effect of this on circuit performance and reliability was analyzed. As a result, in the logic ring oscillator circuit, the SHE shows a slight AC performance degradation of ~1.3%, but in terms of reliability, it causes a decrease in the lifetime of 15.1%–22.1%. In the two types of analog circuits, the possibility of circuit malfunction can be confirmed by SHE, and in terms of reliability, it causes a reduction in lifetime of 53.5%–89.9%. Therefore, it is expected that device and circuit design that can reduce SHE are required in consideration of the various processes analyzed in this work.

Analysis of Self-Heating Effects in Multi-Nanosheet FET Considering Bottom Isolation and Package Options