IEEE Transactions on Power Electronics

The switching oscillations caused by the high-speed switching and low-damping characteristics of SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet seriously deteriorate its high-reliability applications. By viewing from the terminals of both SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet and diode for the turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on and turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off oscillation not only the two-port networks be formed to carry out more accurate analysis about the system characteristics but also the characteristic equations of the system can be deduced, thereby reliably guiding the <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">RC snubber design. Since the oscillation is essentially caused by the imaginary part of poles, with the assistance of the two-port networks, an optimized design method of an <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">RC snubber circuit is developed by the way of actively assigning poles. Different from existing analytical techniques, no necessity is needed to reduce the order of characteristic equations to yield the mathematical expressions of <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">RC snubbers. Instead, <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">RC snubber regions where oscillations can be completely suppressed are determined directly by an exhaustion method. An overlapping area is found, which means that both the turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on and turn- <sc xmlns:mml="http://www.w3.org/1998/...

Analytical Method for RC Snubber Optimization Design to Eliminate Switching Oscillations of SiC MOSFET