Electrical engineering

Bandgap voltage reference

Subthreshold conduction

Transistor

JFET

Transconductance

CMOS

Mixed-signal integrated circuit

Electronic circuit

Field-effect transistor

Engineering

Electronics

Voltage

Dropout voltage

Metallurgy

Materials science

Electronic engineering

Silicon carbide

Analogue electronics

Computer science

Voltage reference

Integrated circuit

Scalability

Database

Digital electronics

IEEE Transactions on Electron Devices

The wide bandgap of silicon carbide (SiC) has attracted a large interest over the past years in many research fields, such as power electronics, high operation temperature circuits, harsh environmental sensing, and more. To facilitate research on complex integrated SiC circuits, ensure reproducibility, and cut down cost, the availability of a low-voltage SiC technology for integrated circuits is of paramount importance. Here, we report on a scalable and open state-of-the-art SiC CMOS technology that addresses this need. An overview of technology parameters, including MOSFET threshold voltage, subthreshold slope, slope factor, and process transconductance, is reported. Conventional integrated digital and analog circuits, ranging from inverters to a 2-bit analog-to-digital converter, are reported. First yield predictions for both analog and digital circuits show great potential for increasing the amount of integrated devices in future applications.

Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology