doi.org/10.1016/j.microrel.2021.114273

Radiation and annealing related effects in NBT stressed P-channel power VDMOSFETs

..., S. Djoric-Veljković
15
Microelectronics Reliability1.90
Volume: 126, Pages: 114273 - 114273
Published: Oct 11, 2021
Paper Fields
Paper Details
Title
Radiation and annealing related effects in NBT stressed P-channel power VDMOSFETs
DOI
doi.org/10.1016/j.microrel.2021.114273
Published Date
Oct 11, 2021
Journal
Microelectronics Reliability
Volume
126
Pages
114273 - 114273
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