Electrical engineering

Electrode

Resistive random-access memory

High resistance

Agronomy

Biology

Protein filament

Memristor

Engineering

Dielectric

Physical chemistry

Composite material

Non-volatile memory

Chemistry

Metallurgy

Materials science

Electronic engineering

Degradation (telecommunications)

Data retention

Layer (electronics)

Oxide

Computer science

Optoelectronics

Resistive touchscreen

Dielectric strength

Telecommunications

Russian Microelectronics

In this review of experimental studies, the retention time and endurance of memristor RRAM memory elements based on reversible resistive switching in oxide dielectrics are studied. The influence of external parameters—switching pulses and ambient temperature—as well as internal factors—evolution of the concentration of oxygen vacancies in the filament region, the material, structure; the thickness of the active dielectric layer, material of metal electrodes on the long-term stability of high resistance state (HRS) and the low resistance state (LRS) of the memristor is discussed.

To the Issue of the Memristor’s HRS and LRS States Degradation and Data Retention Time