organic photodetectors

nonlinear optical

cds cdte

inas gasb

solar cells

diodes leds

light trapping

infrared photodetectors

dark current

Applied Physics Letters

Lutetium oxide (Lu2O3), an ultrawide semiconductor with an intrinsic bandgap of 5.5–5.9 eV, has been proposed as a potential material for a high- performance deep-ultraviolet (DUV) photodetector. Here, crystal oriented Lu2O3 films with bandgap of 5.6 eV are grown on GaN substrates through sputtering Lu2O3 target, based on which a graphene/Lu2O3/GaN DUV photovoltaic detector is constructed with its photoelectric performance being systematically studied. According to our research, under 0 V bias and 185 nm DUV irradiation, this device shows a high photoresponsivity of ∼13.7 μA/W, a short response time of ∼0.4 s, and a high light to dark current ratio of &amp;gt;600, which is about 1 order of magnitude higher than that of a currently reported DUV photovoltaic detector based on other films grown by magnetron sputtering. This research helps to broaden the range of candidate materials for DUV photodetectors and can work as a significant reference to develop the technology for device fabrication.

Lu2O3: A promising ultrawide bandgap semiconductor for deep UV photodetector