Analytical Chemistry (journal)

Electrical engineering

Physics

Engineering

Surface acoustic wave

Topology (electrical circuits)

Chemistry

Materials science

Acoustics

Chromatography

Optoelectronics

Coupling coefficient of resonators

Resonator

IEEE Transactions on Microwave Theory and Techniques

The rapid development of the fifth-generation (5G) wireless system is driving strong demand for high-performance radio frequency filters. This work studies shear horizontal surface acoustic wave (SAW) devices using 15°-rotated Y-cut X-propagating (15°Y-X) LiNbO 3 /SiO 2 /SiC multilayered substrates. Single-crystalline 15°Y-X LiNbO 3 films are bonded to SiO 2 /SiC handling substrates by the smart cut technology. On the basis of accurate finite-element-method simulations, LiNbO 3 /SiO 2 /SiC wafer configurations are optimized to suppress spurious resonance due to Rayleigh-mode and transverse-mode responses, and one-port resonators with a clean spectrum, a high electromechanical coupling coefficient of 22.00%, and an admittance ratio (impedance ratio) over 65 dB are successfully implemented. Based on the characteristics of the resonators, high-performance filters with a center frequency of 1.28 GHz, a large 3-dB fractional bandwidth of 16.65%, and a low minimum insertion loss of 1.02 dB are successfully designed and fabricated. Furthermore, no ripples in the passband of the filters are observed. Additionally, the filters exhibit a temperature coefficient of center frequency of -63.8 ppm/°C and a large power durability of 33.2 dBm. This work confirms the high performances of the SAW devices using the 15°Y-X LiNbO 3 /SiO 2 /SiC multilayered substrate, and this type of SAW device exhibits a prospect of commercial applications in the 5G wireless system.

High-Performance Surface Acoustic Wave Devices Using LiNbO3/SiO2/SiC Multilayered Substrates