Epitaxy

Sediment

Chemical vapor deposition

Biology

Materials science

Deposition (geology)

Layer (electronics)

Schottky barrier

Diode

Paleontology

Metalorganic vapour phase epitaxy

Nanotechnology

Figure of merit

Schottky diode

Metal–semiconductor junction

Optoelectronics

Applied Physics Letters

Vertical β-Ga2O3 Schottky diodes from metal-organic chemical vapor deposition (MOCVD)-grown epitaxial films are reported in this paper for high-power application devices. The Schottky diode, fabricated with a field termination structure, showed a low differential specific on-resistance of 0.67 mΩ cm2. Furthermore, the MOCVD-grown β-Ga2O3 vertical Schottky diodes exhibited a punch-through breakdown and a higher Baliga's figure-of-merit compared to those from other epitaxial growth methods of similar drift layer thickness. This suggests that the MOCVD growth, supporting high-quality epitaxy, can be promising for high-performance β-Ga2O3-based high-power devices.

Vertical <b> <i>β</i> </b>-Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition

Vertical β -Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition