Physics

Electron

PEDOT:PSS

Nanotechnology

Electrode

Quantum efficiency

Ternary operation

Analytical Chemistry (journal)

Full width at half maximum

Physical chemistry

Chemistry

Band bending

Materials science

Programming language

Photodetector

Layer (electronics)

Computer science

Quantum mechanics

Chromatography

Optoelectronics

The Journal of Physical Chemistry Letters

Ultra-narrow-band NIR photomultiplication organic photodetectors (PM-OPDs) were realized in ITO/PEDOT:PSS/active layers/Al based on an interfacial-trap-induced charge injection narrowing (CIN) concept. The rather less Bod Ethex-Hex (BEH) is imbedded in a polymer donor matrix to form large amounts of isolated electron traps. Trapped electrons in BEH close to an Al electrode will enforce hole-tunneling injection induced by interfacial band bending, resulting in a photomultiplication phenomenon. PM-OPDs with P3HT:BEH as the active layer exhibit a narrow response peak at 850 nm with a full-width at half-maximum (fwhm) of 27 nm as well as a rather weak response from 650 to 800 nm. The EQE of 29 700% at 850 nm was achieved in PM-OPDs by incorporating 0.02 wt % of F6TCNNQ under −13 V of applied voltage. The rejection ratio (RR) of the optimized PM-OPDs with F6TCNNQ is 11 for EQE850 nm/EQE700 nm and 10 for EQE850 nm/EQE750 nm, respectively. An EQE of 15 300% at 850 nm was achieved in the ternary PM-OPDs under −13 V of applied voltage, with markedly enhanced RRs of 44 for EQE850 nm/EQE700 nm and 30 for EQE850 nm/EQE750 nm.

Ultra-Narrow-Band NIR Photomultiplication Organic Photodetectors Based on Charge Injection Narrowing