Quantum mechanics

Materials science

Schottky barrier

Silicon

Semiconductor

Diode

Physics

Nanotechnology

Dielectric

Flexoelectricity

Condensed matter physics

Composite material

Schottky diode

Piezoelectricity

Electron

Thermionic emission

Optoelectronics

Nano Energy

Silicon-based Schottky barrier diodes (SBDs), as a two-terminal circuit element, are widely used in modern industries due to its low cost and better compatibility with the complementary metal oxide semiconductor (CMOS) technology. Flexoelectricity resulting from strain gradient is a distinctive electromechanical coupling phenomenon compared to piezoelectricity resulting from strain. Flexoelectricity can exist in any dielectric due to the non-uniform strain breaking symmetry of materials. In this paper, we utilize the induced flexoelectric polarization to tune the behavior of a SBD made of metal and p-type Silicon. Making use of conductive atomic force microscopy (C-AFM), we measured current-voltage of the fabricated Si-based SBD under different tip forces. In order to conduct a quantitative study on the tuning effect of ﬂexoelectricity on the performance of the fabricated Si-based SBD, we introduce an effective barrier height and provide a modified current equation according to the classical thermionic emission theory. The results show that flexoelectricity plays a significant role in dictating the Schottky barrier height, maximum rectified current (density), reverse saturation current (density), rectification ratio, and open voltage of the fabricated SBD. In addition, based on the Hertzian contact model and the measured data, the nonzero flexoelectric coefficients of the used p-type silicon are obtained.

Mechanical Manipulation of Silicon-based Schottky Diodes via Flexoelectricity