Quantum mechanics

Voltage

Engineering

Field electron emission

Materials science

Layer (electronics)

Telecommunications

Computer science

Transistor

Physics

Nanotechnology

Enhanced Data Rates for GSM Evolution

Electronics

Composite material

Field-effect transistor

Electron

Thermal conduction

Optoelectronics

Electrical engineering

Advanced Electronic Materials

We study the electrical transport in back-gate field-effect transistors with ultrathin palladium diselenide (PdSe2) channel. The devices are normally-on and exhibit dominant n-type conduction at low pressure. The electron conduction, combined with the sharp edge and the workfunction decreasing with the number of layers, opens the way to applications of PdSe2 nanosheets in vacuum electronics. In this work, we demonstrate field emission from few-layer PdSe2 nanosheets with current up to the uA and turn-on field below 100 V/um, thus extending the plethora of applications of this recently isolated pentagonal layered material.

Field Emission in Ultrathin PdSe<sub>2</sub> Back‐Gated Transistors

Field Emission in Ultrathin PdSe2 Back‐Gated Transistors

Field Emission in Ultrathin PdSe₂ Back‐Gated Transistors