cds cdte

quantum dot solar

highly efficient

photovoltaic performance

hole transport

counter electrode

solar cells

conversion efficiency

buffer layer

Electroanalysis

Semiconducting quantum dot (QD) materials formed by the combination of groups I, III and VI elements are perceived as promising green materials with excellent photovoltaic properties, owing to their near‐infrared (NIR) remarkable range and less harmful elements. In this study electroactive ∼7 nm copper indium selenide quantum dot (CuInSe 2 QD) capped with generation 1 poly (propylene thiophene) dendrimer (G1PPT), was synthesised via the hot injection method. Fourier transform infrared spectroscopy (FT‐IR) signatures of the dendrimer confirmed the effective functionalization of CuInSe 2 with G1PPT. Characteristic ultraviolet‐visible (UV‐Vis) absorption band at 784 nm and a Tauc plot band gap energy ( E gd ) value of 1.51 eV which indicates a very significant photovoltaic behaviour of the CuInSe 2 ‐G1PPT QD. The cyclic voltammetrically‐deduced HOMO (‐5.140 eV) and LUMO (−3.537 eV) energy levels gave an electrochemical bandgap ( ) value of 1.60 eV. The electron‐hole Coulomb interaction energy ( ) was determined to be 90 MeV, which confirms that the light absorbed by CuInSe 2 ‐G1PPT QD mainly produce photon absorption excitons, making the material highly suitable for photovoltaic application.

Electro‐photovoltaics of Polymer‐stabilized Copper–Indium Selenide Quantum Dot