Balun

Electrical engineering

Physics

Transistor

Heterojunction bipolar transistor

Topology (electrical circuits)

CMOS

Gallium arsenide

Engineering

Monolithic microwave integrated circuit

Voltage

Amplifier

Power (physics)

Antenna (radio)

Bipolar junction transistor

Materials science

Indium phosphide

Computer science

Quantum mechanics

Optoelectronics

This work presents a 120- to 140-GHz 250-nm Indium Phosphide (InP) HBT power amplifier (PA) capable of delivering 15-dBm saturated output power (P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sat</sub> ) and 32% power added efficiency (PAE). The PA is designed using a pseudo-differential common-base (CB) stage to improve the power gain and power-added efficiency (PAE). A load-line matching design methodology is described for CB topology using a planar sub-quarter wavelength balun for low-loss power combining. The chip size is 0.4mm <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">*</sub> 0.5mm including pads. To the author's knowledge, this is a record PAE for D-band PAs using any integrated circuit process.

A 130-GHz Power Amplifier in a 250-nm InP Process with 32% PAE