Quantum mechanics

Materials science

Layer (electronics)

Semiconductor

Band gap

Diode

Poisson's equation

Thermodynamics

Physics

Nanotechnology

Diffusion

Semiconductor device

Charge carrier

Ionic bonding

Electron

Optoelectronics

Journal of Computational Electronics

The recent emergence of lead-halide perovskites as active layer materials for thin film semiconductor devices including solar cells, light emitting diodes, and memristors has motivated the development of several new drift-diffusion models that include the effects of both electronic and mobile ionic charge carriers. In this work we introduce , a versatile simulation tool built for modelling one-dimensional ordered semiconductor devices with mixed ionic-electronic conducting layers. enables users to model devices with multiple, distinct, material layers using up to four charge carrier species: electrons and holes plus up to two ionic species. The time-dependent carrier continuity equations are coupled to Poisson’s equation enabling transient optoelectronic device measurement protocols to be simulated. In addition to material and device-wide properties, users have direct access to adapt the physical models for carrier transport, generation and recombination. Furthermore, a discrete interlayer interface approach circumvents the requirement for boundary conditions at material interfaces and enables interface-specific properties to be introduced.

Driftfusion: an open source code for simulating ordered semiconductor devices with mixed ionic-electronic conducting materials in one dimension