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Original paper

α-Li2ZnGeS4: A Wide-Bandgap Diamond-like Semiconductor with Excellent Balance between Laser-Induced Damage Threshold and Second Harmonic Generation Response

Volume: 32, Issue: 20, Pages: 8947 - 8955
Published: Sep 1, 2020
Abstract
Exploring new nonlinear optical (NLO) materials with high laser-induced damage threshold (LIDT) in the infrared (IR) region is vital for the development of technologies relying on tunable laser systems. Herein, we report on a quaternary diamond-like semiconductor, α-Li2ZnGeS4, crystallizing in the polar, noncentrosymmetric orthorhombic space group Pna21. The wide optical bandgap of 4.07 eV prohibits multiphoton absorption, concurrently yielding...
Paper Details
Title
α-Li2ZnGeS4: A Wide-Bandgap Diamond-like Semiconductor with Excellent Balance between Laser-Induced Damage Threshold and Second Harmonic Generation Response
Published Date
Sep 1, 2020
Volume
32
Issue
20
Pages
8947 - 8955
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