resonance raman

boron concentration

tetrahedral amorphous

resonant raman

Carbon

Although Raman spectroscopy is a good tool for effective assessment of atomic boron concentration in diamond, determination of further physical properties using this non-destructive approach requires advancement in Raman analysis. In this work, we present an extended study of the Raman spectrum of boron-doped diamond, over a broad boron doping range and at increasing measurement temperature, based on the interaction between phonon and electronic Raman scattering effects. The presented analysis demonstrates the considerable contribution of electronic Raman scattering to the Raman spectrum and opens a practical route toward determination of additional boron-doped diamond properties, such as carrier concentration and carrier mobility.

New perspectives for heavily boron-doped diamond Raman spectrum analysis