Finance

Electrical engineering

Nanotechnology

Transistor

Mathematics

Common emitter

Operating system

Epitaxy

Engineering

Mathematical analysis

Voltage

Economics

Structuring

Materials science

Layer (electronics)

Computer science

BiCMOS

Process (computing)

Base (topology)

Optoelectronics

Resistive touchscreen

This paper reviews recent developments in process technology of high-speed SiGe HBTs at IHP. Two device concepts, one with selective epitaxial growth and one with non-selective epitaxial growth of the base, are analyzed with respect to their impact on radio frequency performance. Both device architectures take advantage of a low-resistive base link formed by selective epitaxial growth of extrinsic base regions after emitter structuring. As an intermediate result of the European project TARANTO, HBTs with f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> values of 470 GHz and f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> values of 610 GHz are demonstrated in a 130 nm BiCMOS process.

Device Architectures for High-speed SiGe HBTs