Finance

Epitaxy

Operating system

Electrical engineering

Engineering

Mathematical analysis

Economics

Voltage

Nanotechnology

Transistor

Materials science

Structuring

Layer (electronics)

Mathematics

Computer science

Base (topology)

Common emitter

Optoelectronics

BiCMOS

Resistive touchscreen

Process (computing)

This paper reviews recent developments in process technology of high-speed SiGe HBTs at IHP. Two device concepts, one with selective epitaxial growth and one with non-selective epitaxial growth of the base, are analyzed with respect to their impact on radio frequency performance. Both device architectures take advantage of a low-resistive base link formed by selective epitaxial growth of extrinsic base regions after emitter structuring. As an intermediate result of the European project TARANTO, HBTs with f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> values of 470 GHz and f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> values of 610 GHz are demonstrated in a 130 nm BiCMOS process.

Device Architectures for High-speed SiGe HBTs