Microwave

Quantum mechanics

Wilkinson power divider

Engineering

Literature

Return loss

Telecommunications

Power (physics)

Amplifier

Antenna (radio)

Multi-band device

Power dividers and directional couplers

Insertion loss

Physics

Microstrip

Optics

Electronic engineering

Frequency divider

W band

Chip

Dual (grammatical number)

Extremely high frequency

CMOS

Monolithic microwave integrated circuit

Optoelectronics

Millimeter

Electrical engineering

IEEE Microwave and Wireless Components Letters

A new on-chip dual-band Wilkinson power divider (WPD), developed on a GaAs-based integrated passive device (IPD) process, is designed at 28/60 GHz for millimeter-wave (mmW) applications. Composite right/left-handed lines in microstrip form are employed to achieve the dual-band property. Thanks to the low-loss feature of the GaAs-based IPD process, the proposed mmW WPD ensures comparable performance when compared to its counterparts at microwave frequencies. Besides, the proposed design, one of the few on-chip dual-band WPDs designed in mmW bands, yields better performance in terms of input matching and power loss when compared with the previous work.

On-Chip Dual-Band Millimeter-Wave Power Divider Using GaAs-Based IPD Process