Electrical engineering

Physics

Transistor

Threshold voltage

MOSFET

Engineering

Philosophy

Voltage

Power (physics)

Metallurgy

Materials science

Overdrive voltage

Stress (linguistics)

Electronic engineering

Silicon carbide

Linguistics

Quantum mechanics

Reliability (semiconductor)

Optoelectronics

Negative-bias temperature instability

Power MOSFET

IEEE Transactions on Electron Devices

An overview over issues and findings in SiC power MOSFET reliability is given. The focus of this article is on threshold instabilities and the differences to Si power MOSFETs. Measurement techniques for the characterization of the threshold voltage instabilities are compared and discussed. Modeling of the threshold voltage instabilities based on capture-emission-time (CET) maps is a central topic. This modeling approach takes the complete gate bias/temperature history into account. It includes both gate stress polarities and is able to reproduce the short-term threshold variations during application-relevant 50-kHz bipolar ac-stress. In addition, the impact on circuit operation is discussed.

Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability